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Amorphous Silicon / Crystalline Silicon Heterojunction Solar by Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner

By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)

Amorphous Silicon/Crystalline Silicon sun Cells bargains with a few normal houses of heterojunction sunlight cells, similar to their background, the homes and the demanding situations of the cells, a few vital measurementtools, a few simulation courses and a quick survey of the cutting-edge, aiming to supply an preliminary framework during this box and function a prepared reference for all these drawn to the topic. This publication is helping to “fill within the blanks” on heterojunction sunlight cells. Readers will obtain a accomplished evaluation of the foundations, constructions, processing strategies and the present developmental states of the units.

Prof. Dr. Wolfgang R. Fahrner is a professor on the college of Hagen, Germany and Nanchang college, China.

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28, the way to check the model is described [108]. The measured network reflects the contribution of the junction, C1 and G1 = 1/R1, of the interface states, Cit and Git, and of the series resistance, R3 (Fig. 28a). In a first step, R3 is subtracted from Rs,meas. R3 is known as the high-frequency series resistance of Fig. 28a. Thus, only the series components Zs,corr between the upper terminal and the T-point above R3 are left over (Fig. 28b). Now, these data are converted to a parallel network, Yp = 1/Zs,corr (Fig.

R. ) c-Si a-Si:H (growing film) 40 30 before plasmastart 60s silane plasma 700s silane plasma 20 10 illumination 532nm 0 0 500 1000 1500 time (ns) Fig. 37 a Measurement configuration and b TRMC transients measured at 250 °C before and during the growth of an intrinsic a-Si:H layer on top of a p-type crystalline silicon substrate after excitation with a 10 ns laser pulse at a wavelength of 532 nm monitor the charge carrier kinetics right at the interface between the two materials. The experimental configuration is given in Fig.

3 Surface Passivation In the research field of crystalline silicon (c-Si) solar cells, electronic surface passivation has been recognized as a crucial step to achieve high conversion efficiencies. High bulk and surface recombination rates are known to limit the open-circuit voltage and to reduce the fill factor of photovoltaic devices [112, Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells 29 Fig. 28 Flow diagram of the interface admittance evaluation. The network at the left (outside the sample) shows the mode (parallel or serial) on which the data are based.

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