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1V CMOS G m -C Filters: Design and Applications by Tien-Yu Lo, Chung-Chih Hung (eds.)

By Tien-Yu Lo, Chung-Chih Hung (eds.)

1V CMOS Gm-C Filters: layout and Applications discusses the layout points of transconductor and Gm-C filter out circuits, with a distinct concentrate on 1V circuit implementations. The emphasis is on excessive linearity voltage-to-current blocks for instant and wireline functions, and the designs hide as much as very excessive pace specifications.

1V CMOS Gm-C Filters: layout and Applications begins with a common advent to the techniques of transconductors. The evaluate of the final architectures is supplied, starting from shunt suggestions to floating gate topologies. quite a few transconductors according to nano-scale applied sciences are mentioned with exact attentions to the quick channel influence. The performances are optimized whereas taking velocity, linearity and gear intake into account. The implementation of the Gm-C filter out is brought following the transconductors. The filter out synthesis and non-ideal results as a result of energetic units are analyzed. 3 Gm-C filters are carried out for channel choice in instant receivers, and all of those filters function below a number of modes to avoid wasting chip sector. the objective functions are IEEE 802.11a/b/g instant LANs, Wideband CDMA, cdma2000, and Bluetooth. in addition, the excessive velocity filter out required for pulse sign interface can be mentioned. a number of excessive velocity filters are carried out with systematic layout methods. The layout and dialogue of computerized tuning platforms are integrated as well.

1V CMOS Gm-C Filters: layout and Applications offers a transparent advent of low voltage architectures and yields perception into the impression of circuit non-idealities. The absolutely CMOS implementation will be worthy for instant and wireline purposes. the elemental layout strategies will be simply built in the course of the representation of this booklet. This e-book could be supplied for engineers and researchers who're attracted to the transconductor and Gm-C clear out. it's also a great reference for the direction concerning analog built-in circuit design.

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1V CMOS G m -C Filters: Design and Applications

1V CMOS Gm-C Filters: layout and purposes discusses the layout facets of transconductor and Gm-C clear out circuits, with a different specialize in 1V circuit implementations. The emphasis is on excessive linearity voltage-to-current blocks for instant and wireline purposes, and the designs conceal as much as very excessive velocity requisites.

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Séminaire Bourbaki, Vol. 43, 2000-2001, Exp. 880-893

Desk of Contents

Seminaire Bourbaki quantity forty three web page 1 2000-2001 [doi UNKNOWN] Laurent Bonavero -- Factorisation faible des purposes birationnelles

Seminaire Bourbaki quantity forty three web page 39 2000-2001 [doi UNKNOWN] Marco Brunella -- Courbes entieres dans les surfaces algebriques complexes

Seminaire Bourbaki quantity forty three web page sixty three 2000-2001 [doi UNKNOWN] Michel Emery -- Espaces probabilises filtres : de l. a. theorie de Vershik au mouvement brownien, through des idees de Tsirelson

Seminaire Bourbaki quantity forty three web page eighty five 2000-2001 [doi UNKNOWN] Marc Herzlich -- Linegalite de Penrose

Seminaire Bourbaki quantity forty three web page 113 2000-2001 [doi UNKNOWN] Michele Audin -- Integrabilite et non-integrabilite de systemes hamiltoniens

Seminaire Bourbaki quantity forty three web page 137 2000-2001 [doi UNKNOWN] Pierre Cartier -- Fonctions polylogarithmes, nombres polyzetas et groupes pro-unipotents

Seminaire Bourbaki quantity forty three web page a hundred seventy five 2000-2001 [doi UNKNOWN] Antoine Chambert-Loir -- Theoremes d algebricite en geometrie diophantienne

Seminaire Bourbaki quantity forty three web page 211 2000-2001 [doi UNKNOWN] Philippe Michel -- Repartition des zeros des fonctions L et matrices aleatoires

Seminaire Bourbaki quantity forty three web page 249 2000-2001 [doi UNKNOWN] Michele Vergne -- Quantification geometrique et aid symplectique

Seminaire Bourbaki quantity forty three web page 279 2000-2001 [doi UNKNOWN] Philippe Biane -- Entropie libre et algebres d operateurs

Seminaire Bourbaki quantity forty three web page 301 2000-2001 [doi UNKNOWN] man Henniart -- Progres recents en fonctorialite de Langlands

Seminaire Bourbaki quantity forty three web page 323 2000-2001 [doi UNKNOWN] Emmanuel Peyre -- issues de hauteur bornee et geometrie des varietes

Seminaire Bourbaki quantity forty three web page 345 2000-2001 [doi UNKNOWN] Georges Skandalis -- Geometrie non commutative, operateur de signature transverse et algebres de Hopf

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Extra info for 1V CMOS G m -C Filters: Design and Applications

Sample text

The fully differential circuits show good noise and distortion properties as described in Chapter 2. The fully differential integrator can be realized by two structures, as shown in Fig. 2. The integrator in Fig. 2a requires one fourth capacitance than the ones in Fig. 2b for the same unity-gain frequency. However, the single capacitor in Fig. 2a would be realized by using integrated capacitors, and the structure consists of a significant amount of parasitic capacitors. For high frequency applications, the ground capacitors would be suitable owing to small loading capacitors.

However, the value varies under process fabrication, and an automatic tuning circuit is required. The main function of the automatic tuning circuit is discussed in Chapter 5. The unity-gain frequency is dependent on the transconductance and the loading capacitor. Adjustable transconductor or capacitor is required to compensate process corner variation. Thus, we can keep transconductance constant and vary the capacitance or vice versa. These approaches are called constant-Gm and constant-CL , respectively.

25 illustrates the large signal simulation of the proposed circuit. We can find that if no weak inversion transistors are used, the linearity performance is limited. When we increase the transconductance value of weak inversion transistors, high linearity performance can be obtained. However, if a larger transconductance value of weak inversion transistors is used, the third-order harmonic distortion term would be dominated by the weak inversion transistors. Besides, simulation also indicates a unity-gain bandwidth of 200 MHz with a 2pF loading and the phase margin of 89ı is obtained.

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